- Density: 16GB
- Connector: 240-Pin
- Unbuffered Non-ECC
- Type: SO-DIMM
- Man. no.: A4G16QE8BNPBSE
FEATURES
Description
ATP 16GB DDR4 2133MHz: NES – High Performance Unbuffered Non-ECC SODIMM DRAM Module for Embedded Computers
DDR4 is the fastest Dynamic Random Access Memory (DRAM) technology available. ATP’s DDR4 module is the evolutionary leap from DDR3 technology and supports features and functions that offer lower power consumption, higher performance and better manufacturability compared to older DRAM products. DDR4 is particularly suited for applications that require higher bandwidth to increase product performance.
ATP’s DDR4 DRAM ECC VLP mini-UDIMM offers high speed and is available in a variety of configurations and capacities up to 16GB. The module operates at a clock frequency of 2400MHz at a voltage of 1.2V. Besides DDR4, the Mini-DIMM module is also available as DDR3 and DDR2 version.
Regardless of the exact application, you will always find the perfect Dynamic RAM model at BRESSNER Technology. You can choose between memory capacities from 2GB to 8GB. In addition, we offer the modules in the two designs Dual Inline Memory Module (DIMM) as well as Small Outline Dual Inline Memory Module (SO-DIMM). While DIMMs are used as main memory in conventional computers, SO-DIMMs are mainly used in mobile devices.
Although SO-DIMM modules are somewhat more expensive in comparison, they are also particularly energy-efficient and only half the size of DIMM modules, so that they can easily fit into small housings. If you need DRAM modules but are not sure which memory is best suited for your devices, please contact us. We will then be happy to advise you without obligation.
Manufacturer no.: A4G16QE8BNPBSE
Specifications
Manufacturer no.: A4G16QE8BNPBSE
ATP 16GB DDR4 2133MHz Unbuffered Non-ECC SODIMM | |||||
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Density | 16GB | ||||
Design | SO-DIMM | ||||
Type | Non-ECC Unbuffered | ||||
Velocity | DDR4-2133 | ||||
Chip | 512×8 | ||||
Voltage | VDD=1.2V ± 0.06V VPP=2.5V± 0.125V VDDSPD=2.2V~3.6V |
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Temperature | 0°C ~ 85°C | ||||
Other | Low operating voltage for reduced energy consumption High durability, availability, serviceability (RAS) and improved data integrity High bandwidth of up to 3200 MT/s |